Two New SBD-embedded SiC-MOSFET Modules from Mitsubishi Electric

27 November 2024

Mitsubishi Electric announced that it has begun shipping low-current 3.3kV/400A and 3.3kV/200A versions of a Schottky barrier diode (SBD) embedded silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) module for large industrial equipment, including rolling stock and electric power systems. Together with the existing 3.3kV/800A version, the newly named UnifullTM series comprises three modules to meet the growing demand for inverters capable of increasing power output and power conversion efficiency in large industrial equipment.

Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released earlier, feature an optimized package structure to reduce switching loss and improve SiC performance. Compared to existing power modules, UnifullTM modules, significantly reduce switching loss and contribute to higher power output and efficiency in large industrial equipment, making them suitable for auxiliary power supplies in railcars and drive systems with relatively small capacities.

Product Features

Low-current modules suitable for inverters of various output capacities.

  • New 3.3kV/400A and 3.3kV/200A versions of Mitsubishi Electric’s SBD-embedded SiC-MOSFET module, together with the existing 3.3kV/800A, comprise the new UnifullTM series.
  • The new low-current modules are suitable for the auxiliary power supplies of rolling stock and relatively small-capacity drive systems, expanding the range of applications for improving the power conversion efficiency of inverters in large industrial equipment with varying power requirements.

SBD-embedded SiC-MOSFETs contribute to inverter output, efficiency and reliability.

  • SBD-embedded SiC-MOSFETs with an optimized package structure reduce switching loss by 54% compared to Mitsubishi Electric’s existing full-SiC power module* and by 91% compared to the company’s existing Si power module,** contributing to higher power output and efficiency.
  • Adoption of Bipolar Model Activation (BMA) cell structure improves surge withstand capacity and
    contributes to improved inverter reliability.

Main Specifications

Advancing Decarbonization

To contribute to ongoing decarbonization, there is a growing need for power semiconductors that can efficiently convert power, particularly SiC power semiconductors that significantly reduce power loss. Power semiconductor modules for large industrial equipment are used in power conversion equipment, such as inverters for traction drive systems and power supplies, DC power transmission, and more. Demand is especially strong for high-power, high-efficiency SiC modules that can further improve power conversion efficiency and support inverter designs with varying output capacities.

If you want more information or if you have any questions, please contact Nijkerk Electronics!

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