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Mitsubishi Electric to Construct New Wafer Plant to Boost SiC Power Semiconductor Business

Mitsubishi Electric announced that it will double a previously announced investment plan to approximately 260 billion yen in the five-year period to March 2026 mainly for constructing a new wafer plant to increase production of silicon carbide (SiC) power semiconductors. Under the plan, Mitsubishi Electric expects to respond to rapidly increasing demand for SiC power semiconductors for…

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Mitsubishi SiC MOSFET’s and modules reduce power losses and enables high speed switching

Power devices are a key component in power electronics products for contributing to the realization of a low-carbon society. Attracting attention as the material for the most energy-efficient power device is silicon-carbide (SiC). The material characteristics of SiC have led to a dramatic reduction in power loss and significant energy savings for  power electronics devices.…

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